tsm 12n65 650v n-channel power mosfet 1/8 version: a10 ito - 220 product summary v ds (v) r ds(on) ( ) i d (a) 650 0.8 @ v gs =10v 6 general description the tsm12n65 n-channel enhancement mode power mosfe t is produced by planar stripe dmos technology. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superio r switching performance, and withstand high energy pulse in the avalanche and commutation mode. features low r ds(on) 0.68 (typ.) low gate charge typical @ 41nc (typ.) low crss typical @ 14.6pf (typ.) fast switching ordering information part no. package packing tsm12n65ci c0 ito-220 50pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 12 a tc = 100oc 4.5 a pulsed drain current * i dm 48 a single pulse avalanche energy (note 2) e as 273 mj avalanche current (repetitive) (note 2 i as 12 a single pulse avalanche energy (note 1) e ar 7.6 mj avalanche current (repetitive) (note 1) i ar 12 a total power dissipation @ t c = 25 o c p tot 45 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c note: limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 2.7 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm 12n65 650v n-channel power mosfet 2/8 version: a10 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 650 -- -- v drain-source on-state resistance v gs = 10v, i d = 6a r ds(on) -- 0.68 0.8 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 650v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transfer conductance v ds = 10v, i d = 6a g fs -- 10 -- s dynamic b total gate charge v ds = 480v, i d = 12a, v gs = 10v q g -- 41 -- nc gate-source charge q gs -- 13 -- gate-drain charge q gd -- 10.5 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 2162 -- pf output capacitance c oss -- 183 -- reverse transfer capacitance c rss -- 14.6 -- switching c turn-on delay time v gs = 10v, i d = 12a, v dd = 300v, r g =25 t d(on) -- 30 -- ns turn-on rise time t r -- 85 -- turn-off delay time t d(off) -- 140 -- turn-off fall time t f -- 90 -- source-drain diode ratings and characteristic source current integral reverse diode in the mosfet i s -- -- 12 a source current (pulse) i sm -- -- 48 a diode forward voltage i s = 12a, v gs = 0v v sd -- -- 1.4 v reverse recovery time v gs = 0v, i s =12a, di f /dt = 100a/us t fr -- 510 -- ns reverse recovery charge q fr -- 4.3 -- uc note 1: repetitive rating: pulse width limited by maximum junction temperature note 2: v dd = 50v, i as =12a, l=3.5mh, r g =25 , starting t j =25oc note 3: pulse test: pulse width 300us, duty cycle 2% note 4: essentially independent of operating temperature
tsm 12n65 650v n-channel power mosfet 3/8 version: a10 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 12n65 650v n-channel power mosfet 4/8 version: a10 diode reverse recovery time test circuit & waveform
tsm 12n65 650v n-channel power mosfet 5/8 version: a10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 12n65 650v n-channel power mosfet 6/8 version: a10 electrical characteristics curve (ta = 25 o c, unless otherwise noted) bv ds vs. junction temperature drain current vs., case temperature capacitance maximum safe operating area
tsm 12n65 650v n-channel power mosfet 7/8 version: a10 ito-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code ito-220 dimension dim millimeters inches min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
tsm 12n65 650v n-channel power mosfet 8/8 version: a10 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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